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PD - 96094
IRF7701PbF
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Ultra Low On-Resistance
P-Channel MOSFET
V DSS
HEXFET ? Power MOSFET
R DS(on) max I D
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Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
Lead-Free
-12V
0.011@V GS = -4.5V
0.015@V GS = -2.5V
0.022@V GS = -1.8V
-10A
-8.5A
-7.0A
Description
HEXFET ? power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
1
2
3
4
1=
2=
D
S
G
D
S
8=
7=
D
S
8
7
6
5
The TSSOP-8 package, has 45% less footprint area of the
3=
4=
S
G
6=
5=
S
D
TSSOP-8
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
T J, T STG
Drain- Source Voltage
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
-12
±10
±8.0
±80
1.5
0.96
12
± 8.0
-55 to + 150
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Maximum Junction-to-Ambient ?
83
°C/W
1
12/08/06
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